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| P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=5 ZVP2106A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE -60 -280 -4 20 700 -55 to +150 UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) -1 5 150 100 60 20 7 15 12 15 -60 -1.5 -3.5 20 -0.5 -100 MAX. UNIT CONDITIONS. V V nA A A A mS pF pF pF ns ns ns ns V DD -18V, I D=-500mA V DS=-18V, V GS=0V, f=1MHz I D=-1mA, V GS=0V ID=-1mA, V DS= V GS V GS= 20V, V DS=0V V DS=-60 V, V GS=0 V DS=-48 V, V GS=0V, T=125C(2) V DS=-18 V, V GS=-10V V GS=-10V,I D=-500mA V DS=-18V,I D=-500mA Static Drain-Source On-State R DS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) g fs C iss C oss C rss t d(on) tr t d(off) tf (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. 3-417 Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ( 3 ) ZVP2106A TYPICAL CHARACTERISTICS ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) -3.5 -3.0 -2.5 -12V -2.0 -10V -1.5 -1.0 -0.5 0 0 -10 -20 -30 -40 -9V -8V -7V -6V -5V -4V -50 VGS= -20V -18V -14V -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -2 -4 -6 -8 VGS= -10V -9V -8V -7V -6V -5V -4V -3.5V -10 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics ID(On)-On-State Drain Current (Amps) Saturation Characteristics -10 VDS-Drain Source Voltage (Volts) -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 VDS=-10V -8 -6 -4 ID= -1A -0.5A -0.25A -2 0 0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance () VGS=-5V 10 -7V -8V -9V -10V 2.6 Transfer Characteristics -6V Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 -20 0 n) (o DS 5 Dr R ce an ist es R ce ur So nai Gate Thresh old VGS=-10V ID=-0.5A VGS=VDS ID=-1mA Voltage VG S(t h) 1 -0.1 -1.0 -2.0 20 40 60 80 100 120 140 160 180 ID-Drain Current (Amps) Tj-Junction Temperature (C) On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature 3-418 ZVP2106A TYPICAL CHARACTERISTICS 300 300 gfs-Transconductance (mS) gfs-Transconductance (mS) 250 200 150 100 50 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 VDS=-10V 250 200 150 100 50 0 0 -2 -4 -6 VDS=-10V -8 -10 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage 100 80 VGS-Gate Source Voltage (Volts) 0 -2 -4 -6 -8 -10 -12 -14 -16 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS= -20V -30V -50V C-Capacitance (pF) 60 Ciss 40 20 0 0 -10 -20 -30 -40 Coss Crss -50 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-419 |
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